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Sichanugrist Porponth

Tokyo Institute of Technology

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High-quality a-Si:H deposited at low-temperature by thermally energized film-precursors

2016 The Japan Society of Applied Physics
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透明電極/p層界面に挿入したグラフェンのa-Siセル特性改善効果

2013
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Effect of an inter-electrode distance in VHF-PECVD and gas flow ratios on a-SiGeC:H films and solar cells by using monomethyl germane as a germanium source

2012 Journal of Non-crystalline Solids
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a-SiGeC:H solar cells fabricated near the threshold of the amorphous-to-crystalline transition for narrow gap solar cells and its improvement by modifying interfaces

2011 PVSC | Photovoltaic Specialists Conference
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