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P.A. Ronsheim
P.A. Ronsheim
IBM
Analytical chemistry
Silicon
Materials science
Arsenic
Gate dielectric
3
Papers
18
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Depth profiling of emerging materials for semiconductor devices
2006
Applied Surface Science
P.A. Ronsheim
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Citations (8)
Round-robin study of arsenic implant dose measurement in silicon by SIMS
2006
Applied Surface Science
David S. Simons
Kyung Joong Kim
R Benbalagh
Joe Bennett
A. Chew
D. Gehre
T. Hasegawa
C. Hitzman
J. Ko
Richard M. Lindstrom
B. MacDonald
Charles W. Magee
N. Montgomery
P. Peres
P.A. Ronsheim
S. Yoshikawa
M. Schuhmacher
W. Stockwell
D. E. Sykes
Mitsuhiro Tomita
F. Toujou
Jeongyeon Won
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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers
2004
Applied Surface Science
P.A. Ronsheim
R. Loesing
Anita Madan
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Citations (2)
1