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Kun-Chuan Lin

National Chiao Tung University

6

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15

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Back-Gating Effects on the Ga0.1In0.9P/InP/InGaAs High-Electron-Mobility Transistor.

1995 Japanese Journal of Applied Physics
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Magnesium doping of InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

1994 Applied Physics Letters
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TiWN Schottky Contacts to n-Ga_ In_ P

1994
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TiWN Schottky Contacts to $\bf n\mbox{-}Ga_{0.51}In_{0.49}P$

1994 Japanese Journal of Applied Physics
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Study of Schottky contacts on n‐Ga0.51In0.49P by low‐pressure metal‐organic chemical‐vapor deposition

1993 Journal of Applied Physics
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