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B. Mohamad

Los Angeles Harbor College

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Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

2018 Solid-state Electronics
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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology

2017 Solid-state Electronics
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Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

2017 IRPS | International Reliability Physics Symposium
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(Invited) Dipoles in Gate-Stack/FDSOI Structure

2017
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WITHDRAWN: Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

2017 Microelectronic Engineering
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