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D. Rodefeld
D. Rodefeld
Princeton University
Hydride
Epitaxy
Optoelectronics
Indium gallium arsenide
Physics
3
Papers
11
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High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor
1993
Applied Physics Letters
Vladimir S. Ban
D. Rodefeld
J. R. Flemish
K A Jones
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Room-temperature Properties Of Indium Gallium Arsenide Detectors Optimized For 1.8, 2.1, And 2.5 /spl mu/m
1990
LEOS | Lasers and Electro-Optics Society Meeting
G. H. Olsen
S. M. Mason
G. Gasparian
Abhay Joshi
K. M. Woodruff
Krishna Rao Linga
D. Rodefeld
Michael J. Lange
F. D. Speer
Vladimir S. Ban
G. C. Erickson
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Citations (4)
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