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Mengxi Wang

University of Science and Technology Beijing

5

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8

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Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure

2021 Ceramics International
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Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

2020 Advanced electronic materials
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Lateral Electric-Field-Controlled Perpendicular Magnetic Anisotropy and Current-Induced Magnetization Switching in Multiferroic Heterostructures

2020 Advanced electronic materials
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Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys

2019
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