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J. R. Bates
J. R. Bates
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Semiconductor device
Electron mobility
Epitaxy
Gallium arsenide
Leakage (electronics)
1
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8
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High‐purity InP grown on Si by organometallic vapor phase epitaxy
1991
Applied Physics Letters
O. Aina
M. Mattingly
J. R. Bates
A. Coggins
J. O’Connor
S. K. Shastry
J.P. Salerno
A. Davis
J. P. Lorenzo
K. S. Jones
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Citations (8)
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