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Ekaterina Zoubenko

Technion – Israel Institute of Technology

4

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Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks

2021 Journal of Vacuum Science and Technology
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Thickness dependence of the physical properties of atomic-layer deposited Al2O3

2019 Journal of Applied Physics
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Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

2018 Journal of Vacuum Science and Technology
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Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

2018 Journal of Vacuum Science and Technology
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