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Maxime Bouschet
Maxime Bouschet
Materials science
Photodetector
Optoelectronics
Quantum efficiency
Dark current
4
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1
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0
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2024
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The need for deep etching to fabricate Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector?
2021
Maxime Bouschet
Vignesh Arounassalame
Rodolphe Alchaar
Clara Bataillon
Jean-Philippe Perez
Nicolas Péré-Laperne
I. Ribet-Mohamed
Philippe Christol
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Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector
2021
Vignesh Arounassalame
Maxime Bouschet
Rodolphe Alchaar
A. Ramiandrasoa
Sylvie Bernhardt
Clara Bataillon
Jean-Philippe Perez
Philippe Christol
I. Ribet-Mohamed
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Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging
2021
Photonics
Maxime Bouschet
Ulises Zavala-Moran
Vignesh Arounassalame
Rodolphe Alchaar
Clara Bataillon
Isabelle Ribet-Mohamed
Francisco de Anda-Salazar
Jean-Philippe Perez
Nicolas Péré-Laperne
Philippe Christol
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Infrared unipolar XBn and XBp superlattice photodetectors
2020
Ulisses Zavala-Moran
Rodolphe Alchaar
Jean-Philippe Perez
Jean Rodriguez
Maxime Bouschet
V.H. Compeán-Jasso
Francisco de Anda
Philippe Christol
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