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R.K. Hester
R.K. Hester
Texas Instruments
CMOS
Electronic engineering
Physics
Static random-access memory
Threshold voltage
4
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16
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IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS
1986
IEEE Transactions on Electron Devices
C.-E. Chen
Mishel Matloubian
B.-Y. Mao
Ravishankar Sundaresan
C. Slawinski
H.W. Lam
T.G.W. Blake
L.R. Hite
R.K. Hester
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Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies
1985
IEEE Electron Device Letters
L.R. Hite
Ravishankar Sundaresan
Satwinder Malhi
H.W. Lam
Ashwin H. Shah
R.K. Hester
Pallab K. Chatterjee
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Citations (4)
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