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Shun-Ching Feng
Shun-Ching Feng
Heterojunction bipolar transistor
Physics
Heterojunction
Voltage
Doping
3
Papers
4
Citations
0
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Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs
2004
IEEE Transactions on Electron Devices
Kevin S. Stevens
Rebecca J. Welty
Roger E. Welser
B.E. Landini
Peter M. Asbeck
Shih-Chieh Hung
Wen-Pin Lu
Shun-Ching Feng
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Citations (4)
Regular ArticleStudy of In0.49Ga0.51P/GaAs/In0.49Ga0.51P doubleδ-doped heterojunction bipolar transistor
1999
Superlattices and Microstructures
Wei-Chou Wang
Jing-Yuh Chen
Hsi-Jen Pan
Shun-Ching Feng
Kuo-Hui Yu
Wen-Chau Liu
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Study of In 0.49 Ga 0.51 P/GaAs/In 0.49 Ga 0.51 P double δ-doped heterojunction bipolar transistor
1999
Superlattices and Microstructures
Wei-Chou Wang
Jing-Yuh Chen
Hsi-Jen Pan
Shun-Ching Feng
Kuo-Hui Yu
Wen-Chau Liu
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