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A. Stockman
A. Stockman
ON Semiconductor
Optoelectronics
Materials science
Trapping
Ionization
Transistor
5
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7
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Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
2021
IEEE Transactions on Device and Materials Reliability
A. Stockman
E. Canato
Matteo Meneghini
Gaudenzio Meneghesso
Peter Moens
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Citations (1)
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions
2020
IRPS | International Reliability Physics Symposium
F. Masin
Matteo Meneghini
E. Canato
A. Barbato
C. De Santi
A. Stockman
A. Banerjee
Peter Moens
E. Zanonivl
Gaudenzio Meneghesso
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Citations (2)
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
2020
Microelectronics Reliability
E. Canato
Matteo Meneghini
C. De Santi
F. Masin
A. Stockman
Peter Moens
Enrico Zanoni
Gaudenzio Meneghesso
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Citations (3)
ON-State Gate Stress Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
2020
IIRW | International Integrated Reliability Workshop
A. Stockman
Peter Moens
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OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
2020
Microelectronics Reliability
E. Canato
Matteo Meneghini
C. De Santi
F. Masin
A. Stockman
Peter Moens
Enrico Zanoni
Gaudenzio Meneghesso
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