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Nakamura Norikazu

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AlGaN/GaNおよびInAlN/AlN/GaN‐HEMT構造におけるナノスケールのゲート電流リーク経路の直接観察

2016 Physica Status Solidi A-applications and Materials Science
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Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates

2016
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AlGaN/GaN HEMT構造におけるマイクロクラックの発生と引張り歪みの相関

2013
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Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films

2012 Technical report of IEICE. LQE
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