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G. Bryce
G. Bryce
NXP Semiconductors
Dielectric
Electromigration
Materials science
Deposition (law)
Copper interconnect
2
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11
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Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65nm technology node
2006
Microelectronic Engineering
S. Chhun
L.G. Gosset
J. Michelon
V. Girault
J. Vitiello
M. Hopstaken
S. Courtas
C. Debauche
Pascal Bancken
Nicolas Gaillard
G. Bryce
M. Juhel
L. Pinzelli
J. Guillan
R. Gras
B. Van Schravendijk
J.-C. Dupuy
J. Torres
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Citations (11)
Investigation of an advanced SiH/sub 4/ based self-aligned barrier process for Cu BEOL reliability performance improvement on industrial 110 nm technology
2005
IITC | International Interconnect Technology Conference
P. Dumont-Girard
L.G. Gosset
Sonarith Chhun
M. Juhel
V. Girault
G. Bryce
C. Prindle
J. Torres
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