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Yoshihiro Ikeda
Yoshihiro Ikeda
Renesas Electronics
Electronic engineering
charge injection
Electrical engineering
Physics
Flash memory
4
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93
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QUANTITATIVE ANALYSIS OFRANDOMTELEGRAPH SIGNALS AS FLUCTUATIONS OFTHRESHOLD VOLTAGESINSCALEDFLASHMEMORYCELLS
2007
International Reliability Physics Symposium
Hiroshi Miki
Taro Osabe
Naoki Tega
Akira Kotabe
Hideaki Kurata
Kenji Tokami
Yoshihiro Ikeda
Shiro Kamohara
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Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory
2006
IEDM | International Electron Devices Meeting
Naoki Tega
Hiroshi Miki
Taro Osabe
Akira Kotabe
Kazuo Otsuga
Hideaki Kurata
Shiro Kamohara
Kenji Tokami
Yoshihiro Ikeda
Renichi Yamada
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Citations (80)
Charge-injection length in silicon nanocrystal memory cells
2004
VLSIT | Symposium on VLSI Technology
Taro Osabe
T. Ishii
Toshiyuki Mine
T Sano
T. Arigane
T. Fukumura
Hideaki Kurata
Shunichi Saeki
Yoshihiro Ikeda
Kazuo Yano
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Citations (5)
90-nm-node multi-level AG-AND type flash memory with cell size of true 2 F/sup 2//bit and programming throughput of 10 MB/s
2003
IEDM | International Electron Devices Meeting
Yoshitaka Sasago
Hideaki Kurata
T. Arigane
Kazuo Otsuga
Takashi Kobayashi
Yoshihiro Ikeda
T. Fukumura
Shunichi Narumi
A. Sato
T. Terauchi
Masahiro Shimizu
Satoshi Noda
Kenji Kozakai
O. Tsuchiya
Kazunori Furusawa
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Citations (8)
1