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Yaxin Zhang
Yaxin Zhang
Dresden University of Technology
Electronic engineering
Heterojunction bipolar transistor
Transistor
Optoelectronics
Voltage
3
Papers
13
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Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K
2020
Xiaodi Jin
Christoph Weimer
Yaxin Zhang
Michael Schroter
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Citations (1)
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
2020
IEEE Journal of Solid-state Circuits
Yaxin Zhang
W. Liang
Xiaodi Jin
Mario Krattenmacher
Sophia Falk
Paulius Sakalas
Bernd Heinemann
Michael Schroter
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Citations (7)
12-mW 97-GHz Low-Power Downconversion Mixer With 0.7-V Supply Voltage
2019
IEEE Microwave and Wireless Components Letters
Yaxin Zhang
Wenfeng Liang
P. Sakalas
Anindya Mukherjee
Xiaodi Jin
Julia Krause
M. Schroter
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Citations (5)
1