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Vianney Motte
Vianney Motte
University of Lyon
Boron carbide
Chemistry
Helium
Annealing (metallurgy)
Grain boundary
4
Papers
40
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Helium cluster nucleation and growth in implanted B4C boron carbide
2019
Journal of Nuclear Materials
Vianney Motte
D. Gosset
Gaëlle Gutierrez
S. Doriot
N. Moncoffre
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Citations (4)
Corrigendum to “Helium apparent diffusion coefficient and trapping mechanisms in implanted B4C boron carbide” [J. Nucl. Mater. 517 (2019) 165–174]
2019
Journal of Nuclear Materials
Vianney Motte
Dominique Gosset
Thierry Sauvage
Hélène Lecoq
Nicolas Pradeilles
Aurélien Jankowiak
Nicolas Lochet
Nathalie Moncoffre
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Helium behaviour in implanted boron carbide
2015
EPJ Nuclear Sciences & Technologies
Vianney Motte
Dominique Gosset
Sandrine Miro
S. Doriot
Suzy Surblé
N. Moncoffre
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Citations (7)
Evidence of amorphisation of B4C boron carbide under slow, heavy ion irradiation
2015
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
D. Gosset
Sandrine Miro
S. Doriot
G. Victor
Vianney Motte
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Citations (29)
1