Old Web
English
Sign In
Acemap
>
authorDetail
>
Liangchun Yu
Liangchun Yu
General Electric
Electronic engineering
MOSFET
Silicon carbide
Electronic circuit
Operational amplifier
3
Papers
49
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
SiC MOSFET design considerations for reliable high voltage operation
2017
IRPS | International Reliability Physics Symposium
Peter Almern Losee
Alexander Viktorovich Bolotnikov
Liangchun Yu
Greg Dunne
David Richard Esler
Jeffrey Scott Erlbaum
Brian Rowden
Arun Virupaksha Gowda
A. Halverson
Reza Ghandi
Peter Micah Sandvik
Ljubisa Dragoljub Stevanovic
R. Hristov
Show All
Source
Cite
Save
Citations (21)
500°C Silicon Carbide MOSFET-Based Integrated Circuits
2014
Cheng-Po Chen
Reza Ghandi
Liang Yin
Xingguang Zhu
Liangchun Yu
Steve Arthur
Peter Micah Sandvik
Show All
Source
Cite
Save
Citations (6)
Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range
2014
IEEE Electron Device Letters
Reza Ghandi
Cheng-Po Chen
Liang Yin
Xingguang Zhu
Liangchun Yu
Stephen Daley Arthur
Faisal Razi Ahmad
Peter Micah Sandvik
Show All
Source
Cite
Save
Citations (22)
1