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Meihua Shen
Meihua Shen
Applied Materials
Optoelectronics
Chemistry
Electronic engineering
Electron mobility
MOSFET
5
Papers
108
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pMOSFET with 200% mobility enhancement induced by multiple stressors
2006
IEEE Electron Device Letters
Lori D. Washington
Faran Nouri
Sunderraj Thirupapuliyur
Geert Eneman
Peter Verheyen
Victor Moroz
Lee Smith
Xiaopeng Xu
Mark N. Kawaguchi
T. Huang
Khaled Ahmed
Miheala Balseanu
Li Qun Xia
Meihua Shen
Yihwan Kim
Rita Rooyackers
Kristin De Meyer
R. Schreutelkamp
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Citations (63)
A systematic study of trade-offs in engineering a locally strained pMOSFET
2004
IEDM | International Electron Devices Meeting
Faran Nouri
Peter Verheyen
Lori D. Washington
Victor Moroz
I. De Wolf
Mark N. Kawaguchi
S. Biesemans
R. Schreutelkamp
Yihwan Kim
Meihua Shen
Xiaopeng Xu
Rita Rooyackers
M. Jurczak
Geert Eneman
K. De Meyer
Louisa Smith
Dipu Pramanik
H. Forstner
Sunderraj Thirupapuliyur
G.S. Higashi
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Citations (32)
Line-edge roughness reduction for advanced metal gate etch with 193-nm lithography in a silicon decoupled plasma source etcher (DPSII)
2003
Tito Chowdhury
Hanna Bamnolker
Roni Khen
Chan-Lon Yang
Hean-Cheal Lee
Yan Du
Meihua Shen
Jinhan Choi
Shashank C. Deshmukh
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Citations (2)
Beyond k1=0.25 lithography: 70-nm L/S patterning using KrF scanners
2003
Takeaki Ebihara
Marc D. Levenson
Wei Liu
Jim Zhongyi He
Wendy H. Yeh
Sang Ahn
Toshihiro Oga
Meihua Shen
Hichem MSaad
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Citations (11)
Procede de gravure de couches de revetement anti-reflexion organique (arc)
2002
Oranna Yauw
Meihua Shen
Nicholas Gani
Jeffrey D. Chinn
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