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G. Just
G. Just
Aix-Marseille University
Electronic engineering
Engineering
Flash memory
Communication channel
hot electron
5
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24
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Setting up of a Floating‐Gate test bench in a low noise environment to measure very low tunneling currents
2015
J. Postel-Pellerin
Gilles Micolau
P. Chiquet
Jeanne Melkonian
G. Just
Daniel Boyer
Cyril Ginoux
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Citations (3)
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
2014
Microelectronics Reliability
V. Della Marca
J. Postel-Pellerin
G. Just
Pierre Canet
J.-L. Ogier
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Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses
2014
CAS | International Semiconductor Conference
J. Postel-Pellerin
P. Chiquet
V. Della Marca
T. Wakrim
G. Just
J.-L. Ogier
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Citations (1)
Soft errors induced by natural radiation at ground level in floating gate flash memories
2013
IRPS | International Reliability Physics Symposium
G. Just
Jean-Luc Autran
S. Serre
Daniela Munteanu
S. Sauze
Arnaud Regnier
J. L. Ogier
P. Roche
G. Gasiot
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Citations (15)
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability
2012
Journal of Low Power Electronics
G. Just
Vincenzo Della Marca
Arnaud Regnier
Jean-Luc Ogier
J. Postel-Pellerin
Jean Michel Portal
P. Masson
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