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G.W.C Baker

University of Warwick

8

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13

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

2021 Semiconductor Science and Technology
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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

2021 IEEE Transactions on Electron Devices
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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

2020 Materials Science Forum
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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

2020 Materials Science in Semiconductor Processing
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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

2020 Journal of Applied Physics
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