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S.C. Lu
S.C. Lu
Industrial Technology Research Institute
Optoelectronics
Physics
Quantum efficiency
Analytical chemistry
Quantum dot
5
Papers
89
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Optimal Ge profile design for base transit time of Si/SiGe HBTs
2005
Materials Science in Semiconductor Processing
Shu-Tong Chang
Yung Tsung Liu
Min-Hung Lee
S.C. Lu
M. J. Tsai
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Citations (1)
Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers
2004
SiGeTDM | International SiGe Technology and Device Meeting
Zingway Pei
P.S. Chen
S. F. Lee
Li-Shyue Lai
S.C. Lu
Ming-Jinn Tsai
Wen-Hao Chang
Wen-Yen Chen
An-Tai Chou
T.M. Hsu
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Citations (4)
Performance enhancement of high-speed SiGe-based heterojunction phototransistor with substrate terminal
2004
Applied Physics Letters
Jin-Wei Shi
Zingway Pei
Fu-Te Yuan
Y.-M. Hsu
C. W. Liu
S.C. Lu
M. J. Tsai
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Citations (5)
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots
2003
Applied Physics Letters
Wen-Hao Chang
An-Tai Chou
Wen-Yen Chen
Hung-Tai Chang
T.M. Hsu
Zingway Pei
P.S. Chen
S. F. Lee
L. S. Lai
S.C. Lu
M. J. Tsai
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Citations (56)
Comprehensive low-frequency and RF noise characteristics in strained-Si NMOSFETs
2003
IEDM | International Electron Devices Meeting
M.H. Lee
Pang-Shiu Chen
W.-C. Hua
C. Y. Yu
Y.-T. Tseng
S. Maikap
Y.M. Hsua
C. W. Liu
S.C. Lu
W.Y. Hsieh
Ming-Jinn Tsai
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Citations (23)
1