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Masayoshi Yajima

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Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool

2019 Materials Science Forum
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Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

2014 Materials Science Forum
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Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

2014 Materials Science Forum
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