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J.E. Pence
J.E. Pence
HRL Laboratories
Power semiconductor device
Power-added efficiency
Electronic engineering
Gallium arsenide
High-electron-mobility transistor
5
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91
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High-power V-band AlInAs/GaInAs on InP HEMTs
1993
IEEE Electron Device Letters
Mehran Matloubian
April S. Brown
L.D. Nguyen
M.A. Melendes
Lawrence E. Larson
M.J. Delancey
J.E. Pence
R.A. Rhodes
M.A. Thompson
J. A. Henige
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Citations (31)
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's
1993
IEEE Transactions on Microwave Theory and Techniques
Mehran Matloubian
L.M. Jelloian
April S. Brown
Loi D. Nguyen
Lawrence E. Larson
M.J. Delaney
M.A. Thompson
Rick Rhodes
J.E. Pence
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Citations (30)
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs
1993
IMS | International Microwave Symposium
Mehran Matloubian
L.M. Jelloian
April S. Brown
L.D. Nguyen
Lawrence E. Larson
M.J. Delaney
M.A. Thompson
Rick Rhodes
J.E. Pence
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Citations (6)
20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT
1993
IEEE Microwave and Guided Wave Letters
Mehran Matloubian
April S. Brown
L.D. Nguyen
M.A. Melendes
Lawrence E. Larson
M.J. Delaney
M.A. Thompson
R A Rhodes
J.E. Pence
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Citations (18)
1