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F. G. Dzhurabekova
F. G. Dzhurabekova
University of Helsinki
Ion
Charged particle
Doping
Materials science
Ion implantation
4
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2
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0
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Синергетика катастрофических отказов полупроводниковых приборов при высокоэнергетичном ионном облучении
2016
Б.Л. Оксенгендлер
Ф. Г. Джурабекова
С. Е. Максимов
Н. Ю. Тураев
B. L. Oksengendler
F. G. Dzhurabekova
S. E. Maksimov
N. Yu. Turaev
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Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation
2016
Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques
B. L. Oksengendler
F. G. Dzhurabekova
S. E. Maksimov
N. Yu. Turaev
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The profiles of barium distributions in GaAs doped by low energy barium ions
1997
D. A. Tashmukhamedova
F. G. Dzhurabekova
Mirzhalilova
B.E. Umirzakov
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The simulation of silicon doping by ion bombardment
1995
T.S. Pugacheva
F. G. Dzhurabekova
S.A. Lem
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