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Maito Shiraishi

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Determination of Mg acceptor concentration in GaN through photoluminescence

2021 Applied Physics Express
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Evaluation of acceptor activation rate of Mg/N-ion-implanted GaN annealed at 1400°C under normal pressure

2021 The Japan Society of Applied Physics
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PL characteristics of electron-irradiated and Mg/N-ion-implanted GaN

2021 The Japan Society of Applied Physics
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Investigation of activation anneal for selective p-GaN layer.

2020 The Japan Society of Applied Physics
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