Old Web
English
Sign In
Acemap
>
authorDetail
>
Hideshi Nishikawa
Hideshi Nishikawa
Sumitomo Metal Industries
Crystal
Chemistry
Silicon
Materials science
Optoelectronics
6
Papers
37
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (6)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals
2020
Journal of Electronic Materials
Masataka Hourai
Eiichi Asayama
Hideshi Nishikawa
Manabu Nishimoto
Toshiaki Ono
Masahiko Okui
Show All
Source
Cite
Save
Citations (1)
Review and Comments for the Development of Point Defect-Controlled CZ-Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10/2019)
2019
Physica Status Solidi (a)
Masataka Hourai
Toru Nagashima
Hideshi Nishikawa
Wataru Sugimura
Toshiaki Ono
Shigeru Umeno
Show All
Source
Cite
Save
Citations (3)
Siliziumwafer mit hohem widerstand und verfahren zu seiner herstellung
2003
Nobumitsu Takase
Hideshi Nishikawa
Makoto Ito
Kouji Sueoka
Shinsuke Sadamitsu
Show All
Source
Cite
Save
Citations (0)
Nitrogen effect on grown-in defects in Czochralski silicon crystals
2002
Journal of Crystal Growth
Shigeru Umeno
Toshiaki Ono
Tadami Tanaka
Eiichi Asayama
Hideshi Nishikawa
Masataka Hourai
Hisashi Katahama
Masakazu Sano
Show All
Source
Cite
Save
Citations (3)
Formation of Grown-in Defects during Czochralski Silicon Crystal Growth.
1997
Japanese Journal of Applied Physics
Hideshi Nishikawa
Tadami Tanaka
Yoshio Yanase
Masataka Hourai
Masakazu Sano
Hideki Tsuya
Show All
Source
Cite
Save
Citations (30)
Heat treatment of a wafer
1993
Masataka Horai
Naoshi Adachi
Hideshi Nishikawa
Masakazu Sano
Show All
Source
Cite
Save
Citations (0)
1