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T.E. Ham
T.E. Ham
Analytical chemistry
Electronic engineering
Silicon
Capacitor
Boron
3
Papers
11
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Silicon npn bipolar transistors with indium-implanted base regions
1997
IEEE Electron Device Letters
I. C. Kizilyalli
A. Chen
W.J. Nagy
T. L. Rich
T.E. Ham
Ki-Yeup Lee
Michael Carroll
M Iannuzzi
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Citations (6)
Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors
1996
IEDM | International Electron Devices Meeting
H.-H. Vuong
Conor Rafferty
W. M. Mansfield
H. S. Luftman
D.C. Jacobson
M.R. Pinto
S. A. Eshraghi
J.R. Mcmacken
T.E. Ham
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Citations (5)
Modeling C-V shifts in BoronBF2 -implanted capacitors
1996
International Electron Devices Meeting
C.S. Rafferty
W. M. Mansfield
H. S. Luftman
D.C. Jacobson
M.R. Pinto
S. A. Eshraghi
J.R. Mcmacken
T.E. Ham
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