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Hye-Seung Yu
Hye-Seung Yu
Samsung
Computer science
Electronic engineering
Dram
Bandwidth (signal processing)
Input/output
4
Papers
37
Citations
0
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Industry's First 7.2 Gbps 512GB DDR5 Module
2021
HCS | IEEE Hot Chips Symposium
Sung Joo Park
Jonghoon Kim
Joo Kun
Young-Ho Lee
Kyoung-Sun Kim
Young-Tae Kim
Woo-Jin Na
Choi Ik-Joon
Hye-Seung Yu
Won-Young Kim
J. E. Jung
Jae-Jun Lee
Do-Hyung Kim
Young-uk Chang
Gong-Heum Han
Hangi Jung
Sun-Won Kang
Jeonghyeon Cho
Ho-young Song
Tae-Young Oh
Young-Soo Sohn
Sang-joon Hwang
Joo-young Lee
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A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution
2017
IEEE Journal of Solid-state Circuits
Kyo-Min Sohn
Won Joo Yun
Reum Oh
Chi-Sung Oh
Seong-young Seo
Min-Sang Park
Dong-Hak Shin
Won-Chang Jung
Sang Hoon Shin
Je-Min Ryu
Hye-Seung Yu
Jae-Hun Jung
Hyunui Lee
Seok-Yong Kang
Young-Soo Sohn
Jung-Hwan Choi
Yong-Cheol Bae
Seong-Jin Jang
Gyo-Young Jin
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Citations (26)
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution
2016
ISSCC | International Solid-State Circuits Conference
Kyo-Min Sohn
Won Joo Yun
Reum Oh
Chi-Sung Oh
Seong-young Seo
Min-Sang Park
Dong-Hak Shin
Won-Chang Jung
Sang Hoon Shin
Je-Min Ryu
Hye-Seung Yu
Jae-Hun Jung
Kyung-woo Nam
Seouk-Kyu Choi
Jae-Wook Lee
Uk-Song Kang
Young-Soo Sohn
Jung-Hwan Choi
Chi-wook Kim
Seong-Jin Jang
Gyo-Young Jin
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Citations (10)
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