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Yuan Zhang
Yuan Zhang
SanDisk
Amorphous solid
Phase-change material
Scaling
Voltage
Phase-change memory
2
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27
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One-Dimensional Thickness Scaling Study of Phase Change Material $(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})$ Using a Pseudo 3-Terminal Device
2011
IEEE Transactions on Electron Devices
SangBum Kim
Byoung-Jae Bae
Yuan Zhang
Rakesh Jeyasingh
Young-Kuk Kim
In Gyu Baek
Soonoh Park
Seok-Woo Nam
Hon-Sum Philip Wong
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One-Dimensional Thickness Scaling Study of Phase Change Material $(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})$ Using a Pseudo 3-Terminal Device
2011
IEEE Transactions on Electron Devices
SangBum Kim
Byoung-Jae Bae
Yuan Zhang
Rakesh Gnana David Jeyasingh
Young-Kuk Kim
In Gyu Baek
Soonoh Park
Seok-Woo Nam
H.-S.P. Wong
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Citations (27)
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