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Zhou Kun

University of Electronic Science and Technology of China

11

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41

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Comparative study on the time series forecasting of web traffic based on statistical model and Generative Adversarial model

2020 Knowledge Based Systems
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Experimental and theoretical study of an improved breakdown voltage SOI LDMOS with a reduced cell pitch

2014 Journal of Semiconductors
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A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

2013 Chinese Physics B
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

2013 Chinese Physics B
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

2013 Chinese Physics B
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Ultra-low specific on-resistance vertical double-diffused metal - Oxide semiconductor with a high-k dielectric-filled extended trench

2013 Chinese Physics B
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Novel SOI double-gate MOSFET with a P-type buried layer

2012 Journal of Semiconductors
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High voltage SOI LDMOS with a compound buried layer

2012 Journal of Semiconductors
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A low on-resistance SOI LDMOS using a trench gate and a recessed drain

2012 Journal of Semiconductors
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A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration

2012 Chinese Physics B
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Citations (11)