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J. Scofield
J. Scofield
Cree Inc.
Electronic engineering
Power MOSFET
Electrical engineering
Materials science
Engineering
5
Papers
38
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10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC
2005
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Sei-Hyung Ryu
S. Krishnaswami
M. Das
Brett Hull
J. Richmond
Bradley Heath
Anant K. Agarwal
J.W. Palmour
J. Scofield
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Citations (1)
High Speed Switching Devices in 4H-SiC - Performance and Reliability
2005
ISDRS | International Semiconductor Device Research Symposium
Sei-Hyung Ryu
S. Krishnaswami
Brett Hull
Bradley Heath
Mrinal K. Das
Jim Richmond
Husna Fatima
Jon Zhang
Anant K. Agarwal
John W. Palmour
Aivars J. Lelis
Bruce Geil
Dimosthenis Katsis
Charles Scozzie
J. Scofield
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Citations (13)
Gate oxide reliability of 4H-SiC MOS devices
2005
IRPS | International Reliability Physics Symposium
S. Krishnaswami
Mrinal K. Das
Brett Hull
Sei-Hyung Ryu
J. Scofield
Anant K. Agarwal
John W. Palmour
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Citations (12)
2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications
2005
Sei-Hyung Ryu
Sumi Krishnaswami
Mrinal K. Das
James Richmond
Anant K. Agarwal
John W. Palmour
J. Scofield
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Citations (2)
2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications
2004
International Journal of High Speed Electronics and Systems
Sei-Hyung Ryu
Sumi Krishnaswami
Mrinal K. Das
James Richmond
Anant Anant Agarwal
John W. Palmour
J. Scofield
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Citations (10)
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