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Amaury Gendron-Hansen
Amaury Gendron-Hansen
Electronic engineering
Schottky diode
Optoelectronics
Engineering
Power MOSFET
5
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12
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Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs
2019
Amaury Gendron-Hansen
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4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness
2018
Materials Science Forum
Amaury Gendron-Hansen
Dumitru Sdrulla
Bruce Odekirk
Avinash Srikrishnan Kashyap
Linda Starr
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4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness
2018
ECCE | European Conference on Cognitive Ergonomics
Amaury Gendron-Hansen
Dumitru Sdrulla
Avinash Srikrishnan Kashyap
Bruce Odekirk
William Brower
Laird Thornhill
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Beyond the Datasheet: Commercialization of 700 V - 1.7 kV SiC Devices with Exceptional Ruggedness for Automotive & Industrial Applications
2018
Avinash Srikrishnan Kashyap
Amaury Gendron-Hansen
Dumitru Sdrulla
Braziluce Odekirk
Dennis Meyer
Changsoo Hong
William Brower
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Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET
2017
ISPSD | International Symposium on Power Semiconductor Devices and IC's
In-Hwan Ji
Amaury Gendron-Hansen
Mingyu Lee
Ed Maxwell
Bruce Odekirk
Dumitru Sdrulla
Changsoo Hong
Avinash Srikrishnan Kashyap
Faheem Faheem
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Citations (5)
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