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Sara Fathipour

University of Notre Dame

27

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748

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Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

2020 Nanoscale
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Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

2020 arXiv: Materials Science
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First synthesized WS 2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport

2017 DRC | Device Research Conference
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Reconfigurable Electric Double Layer Doping in an MoS 2 Nanoribbon Transistor

2017 IEEE Transactions on Electron Devices
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Record high current density and low contact resistance in MoS2 FETs by ion doping

2016 VLSIT | Symposium on VLSI Technology
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Demonstration of electric double layer p-i-n junction in WSe 2

2016 DRC | Device Research Conference
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Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate

2016 Journal of Applied Physics
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Steep slope transistors: Tunnel FETs and beyond

2016 ESSDERC | European Solid-State Device Research Conference
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Invited) Phthalocyanine Monolayer Nucleation of Gate Oxide ALD on Single Layer Graphene and TMD Surfaces

2016
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Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

2016 Nanoscale Research Letters
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Citations (16)