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Yi Hsuan Lin
Yi Hsuan Lin
University of Florida
Optoelectronics
Analytical chemistry
Materials science
Electron mobility
High-electron-mobility transistor
6
Papers
54
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AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers
2017
ECS Journal of Solid State Science and Technology
F. Ren
S. J. Pearton
Shihyun Ahn
Yi Hsuan Lin
Francisco Machuca
Robert Weiss
Alex Welsh
Martha R. McCartney
D. Smith
Ivan I. Kravchenko
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Citations (1)
Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide
2016
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Shihyun Ahn
Byung Jae Kim
Yi Hsuan Lin
F. Ren
S. J. Pearton
Gwangseok Yang
Ji Hyun Kim
Ivan I. Kravchenko
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Citations (9)
Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
2016
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
F. Ren
S. J. Pearton
Shihyun Ahn
Yi Hsuan Lin
Francisco Machuca
Robert Weiss
Alex Welsh
Martha R. McCartney
D. Smith
Ivan I. Kravchenko
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Citations (4)
1