Old Web
English
Sign In
Acemap
>
authorDetail
>
V. D. Kuz’min
V. D. Kuz’min
Russian Academy of Sciences
Molecular beam epitaxy
Atomic physics
Physics
Optoelectronics
Conductance
4
Papers
20
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
2019
Journal of Communications Technology and Electronics
A.V. Zverev
A. O. Suslyakov
I. V. Sabinina
G. Yu. Sidorov
M. V. Yakushev
V. D. Kuz’min
V. S. Varavin
V. G. Remesnik
Yu. S. Makarov
A. V. Predein
D. V. Gorshkov
Sergey A. Dvoretsky
V. V. Vasil'ev
Yu. G. Sidorov
A.V. Latyshev
I. I. Kremis
Show All
Source
Cite
Save
Citations (2)
Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–хCdхTe (x =0.22–0.23) Grown by Molecular Beam Epitaxy
2014
Russian Physics Journal
A. V. Voitsekhovskii
S. N. Nesmelov
S. М. Dzyadukh
V. V. Vasil'ev
V. S. Varavin
S. A. Dvoretskii
N. N. Мikhailov
V. D. Kuz’min
V. G. Remesnik
Show All
Source
Cite
Save
Citations (4)
Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n -Hg 1– x Cd x Te ( x = 0.23) in a Wide Temperature Range
2014
Russian Physics Journal
A. V. Voitsekhovskii
S. N. Nesmelov
S. М. Dzyadukh
V. V. Vasil'ev
V. S. Varavin
S. A. Dvoretskii
N. N. Мikhailov
V. D. Kuz’min
V. G. Remesnik
Show All
Source
Cite
Save
Citations (11)
SPECIAL FEATURES OF ADMITTANCE IN MIS STRUCTURES BASED ON GRADED-GAP MBE n-Hg1-xCdxTe (x = 0.31-0.32) IN A TEMPERATURE RANGE OF 8-300 K
2014
Russian Physics Journal
A. V. Voitsekhovskii
S. N. Nesmelov
S. М. Dzyadukh
V. V. Vasil'ev
V. S. Varavin
S. A. Dvoretskii
N. N. Мikhailov
V. D. Kuz’min
V. G. Remesnik
Show All
Source
Cite
Save
Citations (3)
1