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Emmanuel F. Crabbe

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1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

2002 IEEE Electron Device Letters
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オンチップ・グラウンド・プレインを有する半導体チップ

1995
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Comment on "An Accurate Method to Extract Specific Contact Resistivity Using Cross-Bridge Kelvin Resistors"

1986 IEEE Electron Device Letters
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