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Ho Sung Cho

Electronics and Telecommunications Research Institute

12

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33

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A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization.

2022 ISSCC | International Symposium on Security in Computing and Communication
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10-Gb/s 1.59- $\mu \text{m}$ DFB-LD Transmission Over 20 km SMF With No Compensation

2016 IEEE Photonics Technology Letters
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HIGH POWER OPERATIONS OF 980 NM GA0.8IN0.2AS/GAXIN1-XASYP1-Y/GA0.51IN0.49P/GAAS PUMP LASERS PREPARED BY MULTI-STEP METALORGANIC VAPOR PHASE EPITAXIAL GROWTH WITH ION IMPLANTED CHANNELS

1999 Japanese Journal of Applied Physics
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The structural properties of spot size converted laser diodes fabricated by butt-joint selective area growth

1999 CLEO | Conference on Lasers and Electro-Optics
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Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Quantum Well Structure

1997 Japanese Journal of Applied Physics
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1.3 μm tapered active stripe lasers with high slope efficiency and large beam spot-size

1997 ECOC | European Conference on Optical Communication
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Extremely Thin 155 Mbps Optical Transmitter / Receiver Modules using Passive Alignment Packaging Technique on V-Grooved Si Substrate

1997
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Mode-locked fiber laser gyroscope based on a distributed-feedback semiconductor laser amplifier.

1996 Optics Letters
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Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

1995 Journal of Crystal Growth
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InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

1995 Applied Physics Letters
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Citations (9)