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Maximilian W. Feil
Maximilian W. Feil
Infineon Technologies
Stress (mechanics)
MOSFET
Silicon carbide
Reliability (semiconductor)
Simulation
2
Papers
1
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A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation
2021
IRPS | International Reliability Physics Symposium
P. Salmen
Maximilian W. Feil
K. Waschneck
Hans Reisinger
Gerald Rescher
Thomas Aichinger
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Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies
2021
IEEE Transactions on Electron Devices
Christian Schleich
Dominic Waldhoer
Katja Waschneck
Maximilian W. Feil
Hans Reisinger
Tibor Grasser
Michael Waltl
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