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Eugene Y. Tupitsyn
Eugene Y. Tupitsyn
University of South Carolina
Etching
Crystal growth
Composite material
Materials science
Nucleation
4
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49
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Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
2008
Materials Science Forum
Eugene Y. Tupitsyn
A.O. Galyukov
M. V. Bogdanov
A. V. Kulik
Mark Spiridonovich Ramm
Yuri N. Makarov
Tangali S. Sudarshan
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Citations (3)
Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth
2007
Journal of Crystal Growth
Eugene Y. Tupitsyn
A. Arulchakkaravarthi
Roman Drachev
Tangali S. Sudarshan
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Citations (24)
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
2005
Materials Science Forum
Eugene Y. Tupitsyn
Arul Chakkaravarthi Arjunan
Robert T. Bondokov
Robert M. Kennedy
Tangali S. Sudarshan
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Citations (9)
A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor
2002
Japanese Journal of Applied Physics
Robert T. Bondokov
I.I. Khlebnikov
Tsanko Lashkov
Eugene Y. Tupitsyn
Georgiy Stratiy
Yuri I. Khlebnikov
Tangali S. Sudarshan
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Citations (13)
1