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Naoki Yasuda

National Institute of Advanced Industrial Science and Technology

6

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47

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Degradation mechanism of HfAlOX∕SiO2 stacked gate dielectrics studied by transient and steady-state leakage current analysis

2005 Journal of Applied Physics
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Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

2005 Microelectronics Reliability
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Effect of the interfacial SiO2 layer thickness on the dominant carrier type in leakage currents through HfAlOx∕SiO2 gate dielectric films

2004 Applied Physics Letters
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