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Chaohui Yu
Chaohui Yu
Southeast University
Electronic engineering
LDMOS
Transistor
Degradation (geology)
stress conditions
3
Papers
9
Citations
0
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A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect
2014
IEICE Electronics Express
Chunwei Zhang
Siyang Liu
Daying Sun
Chaohui Yu
Weifeng Sun
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Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor
2014
IEEE Electron Device Letters
Weifeng Sun
Chunwei Zhang
Siyang Liu
Tingting Huang
Chaohui Yu
Wei Su
Aijun Zhang
Yuwei Liu
Xiaowei He
Xingwen Wu
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Investigations of Hot-carrier-induced Degradation for 700 V n-LDMOS Transistor Under Different Stress Conditions
2013
Iete Journal of Research
Chunwei Zhang
Siyang Liu
Weifeng Sun
Tingting Huang
Chaohui Yu
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