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T. Büttner
T. Büttner
Fraunhofer Society
Ferroelectricity
Analytical chemistry
Physics
Non-volatile memory
Logic gate
4
Papers
156
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Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
2019
IMW | International Memory Workshop
T. Ali
Patrick Polakowski
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
R. Hoffmann
Malte Czernohorsky
K. Kühnel
P. Steinke
Lukas M. Eng
K. Seidel
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Citations (8)
Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory
2019
IEEE Transactions on Electron Devices
T. Ali
Patrick Polakowski
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
R. Hoffmann
Malte Czernohorsky
K. Kühnel
P. Steinke
K. Zimmermann
K. Biedermann
Lukas M. Eng
K. Seidel
Johannes Müller
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Citations (9)
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
2018
Applied Physics Letters
T. Ali
P. Polakowski
Stefan Riedel
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
K. Seidel
D. A. Löhr
R. Hoffmann
M. Czernohorsky
Kati Kühnel
Xaver Thrun
N. Hänisch
P. Steinke
J. Calvo
Johannes Müller
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Citations (57)
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
2018
IEEE Transactions on Electron Devices
T. Ali
Patrick Polakowski
Stefan Riedel
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
K. Seidel
D. A. Löhr
R. Hoffmann
M. Czernohorsky
Kati Kühnel
P. Steinke
J. Calvo
K. Zimmermann
Johannes Müller
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Citations (82)
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