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Armand Beyer
Armand Beyer
GlobalFoundries
Dielectric strength
Time-dependent gate oxide breakdown
Analytical chemistry
Dielectric
Materials science
8
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38
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A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities**
2014
Advanced Engineering Materials
Zhongquan Liao
Martin Gall
Kong Boon Yeap
Christoph Sander
Oliver Aubel
Uwe Mühle
Jürgen Gluch
Sven Niese
Yvonne Standke
Rüdiger Rosenkranz
Markus Löffler
Norman Vogel
Armand Beyer
Hans-Jürgen Engelmann
Peter Guttmann
Gerd Schneider
Ehrenfried Zschech
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Citations (5)
Empirical BEOL-TDDB evaluation based on I(t)-trace analysis
2014
Microelectronics Reliability
Oliver Aubel
Armand Beyer
Georg Talut
Martin Gall
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Advanced metallization concepts and impact on reliability
2014
Japanese Journal of Applied Physics
Meike Hauschildt
Bernd Hintze
Martin Gall
Frank Koschinsky
Axel Preusse
Tibor Bolom
Markus Nopper
Armand Beyer
Oliver Aubel
Georg Talut
Ehrenfried Zschech
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Citations (8)
An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures
2013
IRPS | International Reliability Physics Symposium
Kong Boon Yeap
Martin Gall
Christoph Sander
Sven Niese
Zhongquan Liao
Yvonne Ritz
Rüdiger Rosenkranz
Uwe Mühle
Jürgen Gluch
Ehrenfried Zschech
Oliver Aubel
Armand Beyer
Christian Hennesthal
Meike Hauschildt
Georg Talut
Jens Poppe
Norman Vogel
Hans-Jürgen Engelmann
Douglas Stauffer
Ryan Major
Oden L. Warren
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Citations (2)
Backend-of-line reliability improvement options for 28nm node technologies and beyond
2011
IITC | International Interconnect Technology Conference
Oliver Aubel
Christian Hennesthal
Meike Hauschildt
Armand Beyer
Jens Poppe
Georg Talut
M. Gall
Jens Hahn
Juergen Boemmels
Markus Nopper
Robert Seidel
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Citations (4)
1