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I. C. Kizilyalli
I. C. Kizilyalli
Nokia
Kinetic isotope effect
Deuterium
Chemistry
Electronic engineering
Fabrication
4
Papers
426
Citations
0.01
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Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI
2002
IEEE Electron Device Letters
M. Mastrapasqua
Pierpaolo Palestri
Andrea Pacelli
G. K. Celler
Michel Ranjit Frei
P. R. Smith
R. Johnson
L. Bizzarro
Wen Lin
Tony Ivanov
Michael Carroll
I. C. Kizilyalli
Clifford Alan King
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Citations (12)
On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing
2000
IEEE Electron Device Letters
Zhi Chen
K. Hess
Jinju Lee
Joseph W. Lyding
Elyse Rosenbaum
I. C. Kizilyalli
Sundar Chetlur
Robert Huang
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Citations (85)
Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
1998
Physica E-low-dimensional Systems & Nanostructures
K. Hess
Leonard F. Register
Blair R. Tuttle
Joseph W. Lyding
I. C. Kizilyalli
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Citations (41)
REDUCTION OF HOT ELECTRON DEGRADATION IN METAL OXIDE SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING
1996
Applied Physics Letters
Joseph W. Lyding
K. Hess
I. C. Kizilyalli
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Citations (288)
1