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Roy H. OlssonIII

University of Pennsylvania

Materials science
Ferroelectricity
Optoelectronics
CMOS
Wafer

3

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2

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Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure

2021 Journal of Applied Physics
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Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

2021 Applied Physics Letters
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