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G.F. Cerofolini

STMicroelectronics

22

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THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION,

2006
- G.F. Cerofolini
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Nearly flat, terraced, hydrogen-terminated, 1×1 (100) silicon prepared by high-temperature exposure to H2

2005 Applied Physics A
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Hydrosilation of 1‐alkyne at nearly flat, terraced, homogeneously hydrogen‐terminated silicon (100) surfaces

2005 Surface and Interface Analysis
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The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions

2003 Applied Physics A
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Adsorption-desorption equilibrium and kinetics on surfaces undergoing self-similar reversible reconstruction

2003 Journal of Chemical Physics
- G.F. Cerofolini
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The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states

2002 Applied Physics A
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Strategies for ultralow-κ dielectrics for integrated-circuit interconnects

2002 Materials Science in Semiconductor Processing
- G.F. Cerofolini
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Studies in the acid-base theory. The base strength of amines

2001 Chemical Physics Letters
- G.F. Cerofolini
- N. Re
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Core electrons as probes of the net-charge distribution in molecules: a case study

2001 Chemical Physics Letters
- G.F. Cerofolini
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Evidence for the precursors of nitrided silicon in the early stages of silicon oxynitridation in N2:N2O atmosphere

2001 Applied Physics Letters
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