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Dirk Wouters

RWTH Aachen University

14

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61

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Tuning the Memory Window of TaOx ReRAM using the RF Sputtering Power

2021 ISCAS | International Symposium on Circuits and Systems
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Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM

2020 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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The speed of sequence processing in biological neuronal networks.

2020
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

2020
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Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode

2020 Thin Solid Films
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On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices

2019 Nanoscale
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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1

2019 Nanoscale
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

2019 APL Materials
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Mott-transition-based RRAM

2019 Materials Today
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Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

2019 IMW | International Memory Workshop
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