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Fanming Zeng

Xiamen University

5

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40

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Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well

2016 IEEE Photonics Journal
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Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

2016 Journal of Alloys and Compounds
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Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells

2013 IEEE Photonics Journal
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Improved Quantum Efficiency in Semipolar $(1\bar{1}01)$ InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth

2013 IEEE Transactions on Electron Devices
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Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells

2013 Applied Physics Express
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