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J. Shappir

Hebrew University of Jerusalem

7

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Dielectric relaxation and porosity determination of porous silicon

2002 Journal of Non-crystalline Solids
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Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy

2000 Physica E-low-dimensional Systems & Nanostructures
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Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide

1993 Microelectronic Engineering
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The effect of oxygen adsorption on the surface barrier height of CdS

1969 Surface Science
- J. Shappir
- A. Many
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